Product Description
*** FEATURES: automatic identification of components automatic identification of connection pins identification of special features such as detection of protection diodes and detection of shunt resistors bipolar transistors: measurement of current gain and leakage current, silicon and germanium diode detection threshold voltage measurement for enrichment MOSFETs forward voltage measurement for diodes, LEDs and base-junctions Transistor transmitter automatic and manual extinguishing *** SPECIFICATIONS: Specification Summary at 20°C (68°F) unless otherwise specified short circuit peak current cut off: -5.5 mA up to 5.5 mA Permanent short circuit peak voltage: -5.1 V up to 5.1 V transistor: gain range (HFE): 4 - 65,000 Gain precision: ± 3% ± 5 Hfe maximum collector-to-emitter voltage (VCEO): 2.0 V - 3.0 V base-emitter voltage accuracy VBE: -2% -20 mV up to +2% + 20 mV base-emitter voltage VBE for Darlington transistor (shunted): 0.95 V - 1.80 V (0.0. 75 V - 1.80 V) base-emitter shunt resistance threshold: 50 kΩ - 70 kΩ collector current BJT: 2.45 mA - 2.55 mA acceptable leakage current BJT: 0.7 mA MOSFET: gate-source voltage range: 0.1 V - 5.0 V accuracy of only he: -2% -20 mV up to +2% + 20 mV drain current: 2.45 mA - 255 mA gate resistance: 8 kΩ depletion drain current: 4.5 mA drain-source currents JFET: 0.5 mA - 5.5 mA thyristor/Triac: gate current: 4.5 mA Hold: 5.0 mA diode: test current: 5.0 mA voltage accuracy: -2% -20 mV up to +2% + 20 mV forward voltage for LED identification: 1.50 V - 4.00 V short-circuit threshold: 10 Ω battery: type: MN21 / L1028 / GP23A 12 V alkaline range. Voltage: 7. 50 V - 12 V alarm threshold: 8.25 V. Dimensions: 103 x 70 x 20 mm (4.1 x 2.8 x 0.8 inches). Weight per product (nett): 0.098 kg (3.5 oz). Working temperature: 0 °C ~ 50 °C (32F ~ 122F)